• Integrated circuit - Wikipedia

    An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material that is normally silicon.The integration of large numbers of tiny MOS transistors into a small chip results in circuits that are orders of magnitude smaller, faster, and less expensive than those ...

  • Silicon Germanium (SiGe) Technology Enhances Radio F -

    Silicon Germanium (SiGe) is the newest innovation for simultaneously improvingthe power consumption, sensitivity, and dynamic range of a receiver. GST-3 isa new high-speed IC process technology based on silicon germanium (SiGe), whichfeatures a transition figure (f T) of 35GHz.

  • Germanium photodetector integrated in a Silicon-On ...

    In this paper, we present a 40 Gbit/s silicon modulator based on carrier depletion in both lateral pn and interleaved pn junction and a 40Gbit/s lateral pin germanium photodetector integrated in a ...

  • MACOM Silicon Germanium (SiGe)

    MACOM has led the way in applying silicon germanium (SiGe) BiCMOS technology for commercial and military applications to ensure system power savings, easier bias and control circuitry, lower overall component cost, increased frequency and oscillating capabilities and integration benefits.

  • Difference Between Silicon and Germanium Compare the ...

    30/09/2011  The key difference between silicon and germanium is that the Germanium has d electrons, but Silicon does not have any d electrons.. Silicon and germanium, are both in the same group (group 14) of the periodic table.Hence, they have four electrons in the outer energy level. Moreover, they occur in two oxidation states, +2 and +4.Silicon and germanium share similar

  • Silicon-based silicon–germanium–tin heterostructure

    28/03/2014  Silicon photonics (SiP) is a subset of group IV photonics (GFP). Today, the mainstays of SiP are the Ge photodetector, the Ge-quantum-well modulator, the SiGe Franz–Keldysh electro-absorptive modulator and the Ge-on-Si LD. Germanium's direct bandgap of 0.8 eV imposes an upper limit of about 1550 nm upon the wavelength of operation λ o.

  • Cited by: 26
  • Silicon Germanium (SiGe) Technology ... - Maxim Integrated

    Silicon Germanium (SiGe) is the newest innovation for simultaneously improvingthe power consumption, sensitivity, and dynamic range of a receiver. GST-3 isa new high-speed IC process technology based on silicon germanium (SiGe), whichfeatures a transition figure (fT) of 35GHz. A typical front-end blockdiagram

  • Silicon-Germanium (SiGe) Alloy - Reade

    This provides huge economic benefit since mature CMOS is the IC industry cost leader. In addition silicon germanium provides ultra high frequency capability (well over 100GHz) on the identical silicon platform where baseband, memory and digital signal processing functions can also be integrated.

  • Silicon Quantum Integrated Circuits SpringerLink

    Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device ...

  • What Comes After Silicon? - Chris Lee - Medium

    19/09/2017  In the past, silicon and germanium faced the same problems. It is hard to set up a mature fabrication process. Silicon and germanium integrated circuits created the market and led the industry. As ...

  • Germanium-on-Silicon for Integrated Silicon Photonics

    Germanium-on-Silicon for Integrated Silicon Photonics Xiaochen Sun Massachusetts Institute of Technology USA 1.Introduction To meet the unprecedented demands for data transmission speed and bandwidth silicon integrated photonics that can generate, modulate, process and detect light signals is being developed. Integrated silicon photonics that ...

  • Silicon Radar GmbH - Manufacturer of Radar Front Ends ...

    Silicon Radar designs and delivers Monolithic Microwave Integrated Circuit (MMICs) on a technologically advanced level. Amongst others they are manufactured in affordable Silicon-Germanium-Technology (SiGe). Our products support a wide range of applications like precision measurement, material analysis, object control, object detection, medical ...

  • Germanium-on-Silicon for Integrated Silicon Photonics

    Germanium-on-Silicon for Integrated Silicon Photonics Xiaochen Sun Massachusetts Institute of Technology USA 1.Introduction To meet the unprecedented demands for data transmission speed and bandwidth silicon integrated photonics that can generate, modulate, process and detect light signals is being developed. Integrated silicon photonics that ...

  • Germanium - Wikipedia

    Germanium is a chemical element with the symbol Ge and atomic number 32. It is a lustrous, hard-brittle, grayish-white metalloid in the carbon group, chemically similar to its group neighbours silicon and tin. Pure germanium is a semiconductor with an appearance similar to elemental silicon.

  • 42 GHz pin Germanium photodetector integrated in ... -

    42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide Laurent Vivien1, Johann Osmond1, Jean-Marc Fédéli2, Delphine Marris-Morini1, Paul Crozat1, Jean-François Damlencourt2, Eric Cassan1, Y.Lecunff2, Suzanne Laval1 1

  • How close are we to fabricating a Germanium IC?

    I am not actually talking here about SiGe(Silicon-Germanium hybrids) but an integrated circuit that uses entirely Germanium(doped of course in certain areas)? It is my understanding that even though Germanium was used to make the first discrete transistors, there are many problems with using it as a substrate for IC fabrication. Such as the ...

  • Integrated GHz silicon photonic interconnect with ...

    Fig. 1. Integrated optical interconnect link with a silicon electro-optical modulator, silicon waveguide, and germanium-on-silicon photodetector, as illustrated with SEM images of (a) the full optical link, (b) the ring resonator modulator after silicidation, and (c) the lateral metal-germanium-metal photodetector after electrode hole etch.

  • Researchers using germanium instead of silicon for CMOS ...

    9/12/2014  Germanium is one material being considered to replace silicon because it could enable the industry to make smaller transistors and more compact integrated circuits, Ye said.

  • The legend of Jack Kilby: 55 years of the integrated ...

    12/09/2013  Kilby’s original integrated circuit was rough—just a sliver of germanium glued to a glass slide. On September 12, 1958, Kilby called together the company’s executives. He hooked the crude ...

  • Integrated Germanium-on-Silicon Detector Opens the

    While one company’s approach to integrated silicon-germanium photodetectors is described in detail in the feature on page 74 of this issue, Mario J. Paniccia and his Intel Corp. colleagues in Santa Clara, Calif., and in Jerusalem have taken a different approach, fabricating germanium-on-silicon photodetectors with 29.4-GHz bandwidth and 93 percent quantum efficiency.

  • Silicon germanium: fast, quiet, and powerful EDN

    The germanium in the silicon lattice provides far more benefits to a bipolar transistor than it does to the germanium-implanted channel of a strained-silicon-CMOS process. Like with the strained silicon, the mobility increases, but you derive more benefit from the change in the bandgap. For this reason, HBT processes benefit from bandgap ...

  • OSA 42 GHz p.i.n Germanium photodetector

    42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide Laurent Vivien, Johann Osmond, Jean-Marc Fédéli, Delphine Marris-Morini, Paul Crozat, Jean-François Damlencourt, Eric Cassan, Y. Lecunff, and Suzanne Laval

  • 发布位置:Optics Express 2009作者:Laurent Vivien Johann Osmond Jeanmarc Fedeli Delphine Marrismorini P Crozat从属关系: University of Paris Sud关于:Quantum efficiency Silicon on insulator Chemical vapor deposition Photodetector
  • Ultra-wideband Ge-rich silicon germanium integrated Mach ...

    Ultra-wideband Ge-rich silicon germanium integrated Mach-Zehnder interferometer for mid- infrared spectroscopy. Optics Letters, Optical Society of America, 2017, 42 (17), pp.3482-3485.

  • Why silicon and germanium are semiconductors

    Silicon and germanium can also be formed into an alloy of silicon-germanium with a molecular formula of the form Si 1−x Ge x. Silicon-germanium serves as a semiconductor in integrated circuits for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors.

  • Silicon Germanium (SiGe) Downconverter Tuned for GPS -

    The MAX2682 is one of a family of Silicon Germanium (SiGe) downconverters designed for low-voltage, low-current operation, and is ideal for portable communications equipment. The MAX2682 can be used with input radio frequencies (RFs) between 400MHz and 2500MHz, to downconvert to intermediate frequencies (IFs) between 10MHz to 500MHz. The RF ...

  • Why Silicon (Si) diodes are preferred over Germanium ...

    16/03/2016  As we all know, both Silicon and Germanium are semiconductor devices. But the present trend is to use Silicon instead of Germanium in many devices like SMPS etc. But there is a disadvantage for ...

  • Theoretical Estimation to Improve Optical

    Cite this paper: Shayan Saeidi, Hassan Kaatuzian, Theoretical Estimation to Improve Optical Characteristics of Germanium Lasers for Integrated Silicon Photonics Application, International Journal of Optics and Applications, Vol. 5 No. 3, 2015, pp. 65-70. doi: 10.5923/j.optics.20150503.03.

  • 作者:Shayan Saeidi Hassan Kaatuzian从属关系: Amirkabir University of Technology关于:Quantum efficiency Silicon photonics Silicon-germanium
  • Optical and compositional properties of amorphous silicon ...

    Optical and compositional properties of amorphous silicon-germanium films by plasma processing for integrated photonics William W. Hernández-Montero,* Ignacio E. Zaldívar-Huerta, Carlos Zúñiga ...

  • Silicon-germanium - Wikipedia

    SiGe (/ ˈ s ɪ ɡ iː / or / ˈ s aɪ dʒ iː /), or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x.It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into ...

  • Integrated germanium optical interconnects on silicon ...

    11/05/2014  The integration of germanium quantum-well devices and low-loss waveguides with silicon substrates shows promise for realizing low-loss, on-chip photonic interconnects.

  • Germanium waveguide photodetectors integrated on

    3/11/2008  Waveguide photodetectors integrated on silicon for the chip to chip connection were realized with SiGe superlattice structures in a p–i–n diode , . Another approach used poly germanium for a near infrared waveguide photodetector . We report of the MBE growth of a p–i–n detector with single crystalline germanium integrated on silicon.

  • Integrating silicon photonics Nature Photonics

    In a nutshell, the integrated link consists of a fully integrated silicon photonic transmitter chip with hybrid silicon lasers and a fully integrated receiver chip based on germanium photodetectors.

  • Silicon Modulators and Germanium Photodetectors on

    Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization Abstract: Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The ...

  • Bones Hi - Fi: Germanium Transistor Based Audio Power ...

    10/05/2013  Yet unknown to most audiophiles, a type of power transistor – namely of the germanium type – can even approach closer to the sound of a zero feedback SET audio power amp than either silicon or MOSFET types. But why aren’t hi-fi audio power amps or even integrated amplifiers based on germanium transistors flooding the hi-fi market these days?

  • Integrated Phased Array Systems in Silicon

    system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18- m silicon–germanium and the first fully integrated 24-GHz four-ele-ment phased array transmitter with integrated power amplifiers in 0.18- m CMOS. The transmitter and receiver are capable of beam

  • 发布位置:Proceedings of the IEEE 2005作者:Ali Hajimiri Hossein Hashemi Arun Natarajan Xiang Guan A Komijani从属关系: California Institute of Technology关于:Transmitter Low-noise amplifier Phased array MOSFET Wireless Silicon
  • Chartered to license IMEC silicon-germanium process EDN

    Chartered to license IMEC silicon-germanium process SINGAPORE -- Chartered Semiconductor Manufacturing, the world's third largest foundry, is joining an industrial affiliation program organized by the Interuniversities Microelectronics Center (IMEC) in Leuven, Belgium, to gain access to the 0.18-micron silicon germanium (SiGe) BiCMOS technology developed within the program.

  • Silicon-based Photonic Integrated Circuits for the Mid ...

    losses can be primarily attributed to the defective silicon-germanium interface. Fig. 6 is showing the defects revealed in the germanium layer using etching in a CrO 3:HF solution and it’s evident that the number of defects increase as one approaches the interface. Another source of waveguide loss is the side wall roughness. By

  • Advanced Hybrid Photonic Integration

    Mixed-material platform and optoelectronic integration technology: NeoPhotonics utilizes a set of proprietary integration platforms that provide optoelectronic functionality on silicon and other integrated compound semiconductor substrates including Indium Phosphide, Gallium Arsenide and Silicon Germanium, and integrated combinations of these ...

  • Germanium electrostatic quantum dot with integrated charge ...

    Germanium electrostatic quantum dot with integrated charge detector in an MOS structure G. Mazzeo 21,a, E. Yablonovitch , H. W. Jiang 3 1 Department of Electrical Engineering, UCLA, Los Angeles, CA 90095 2 Department of Electrical Engineering, University of California at Berkeley, Berkeley, CA 94720 3 Department of Physics and Astronomy, UCLA, Los Angeles, CA 90095


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